%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%% The abstract must be written in LaTeX2e               %%
%% Make sure that your abstract can be compiled before   %%
%% you send it to the organizer.
%%
%% Do not use personal macros in your TeX file, and,     %%
%% for the sake of making your abstract understandable   %%
%% to a large audience and to avoid difficulties with    %%
%% the handling of your file, please limit the use of    %%
%% formulas as much as possible.
%%
%% We suggest that you do not include references in      %%
%% your abstract. In case that you must have references, %%
%% then do not use \cite commands.                       %%
%%
%%
%% For labels, try to write : \label{yourname01},        %%
%% \label{yourname02}...                                 %%
%% Your abstract should be no more than one page long.
%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
\documentclass{article}
\usepackage{amsthm,amsmath,amssymb,latexsym}
\pagestyle{empty} \textwidth=12.8cm \textheight=21.7cm
\hoffset=-0.3in \voffset=-0.6in
\parskip=6pt
\lineskip=18pt
%------------------------------------------------------------
\begin{document}
\baselineskip=15pt

\centerline{\large \bf Numerical Methods for the Deterministic Solution of the}

\centerline{\large \bf Boltzmann Transport Equation in Semiconductors
and Insulators}

\bigskip

\centerline{Massimo Rudan}
\centerline{\it ARCES-DEIS- University of Bologna, Italy}
\centerline{e-mail {\tt mrudan@deis.unibo.it}}

%%% in case of several authors:
\smallskip
\centerline{Elena Gnani, Susanna Reggiani}
%\centerline{\it Institution Name,Country}
%\centerline{e-mail {\tt Author 2}}
%%%

\bigskip
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

\par
%   Text of the abstract
%
The subject of this research is the development  of a numerical method
for the deterministic solution of  the Boltzmann Transport Equation in
silicon devices.  The main motivation for it is the necessity to reach
a trade-off between minimizing CPU-time  consumption in the simulation
of two or three-dimensional devices,  and the necessity of knowing the
carrier-distribution function at high energies.
%
\\
%
In the  past  years  this  method   has  been enriched  with   several
scattering mechanisms, which are  relevant for the correct modeling of
electron  transport   in  silicon, and  with    the silicon  full-band
structure  in terms of density of  states and  group velocity for both
the conduction and the   valence band.  After the  full-band structure
has been implemented, the  most relevant  scattering models have  been
adapted to it  for both  electrons and  holes.  The results  reproduce
with good accuracy the available  experimental data.  Furthermore  the
temperature  dependence has  been    studied in  order  to   correctly
reproduce  the   main  transport properties   for   a wide   range  of
temperatures.
%
\\
%
As far as silicon dioxide is concerned, a first-order investigation of
the transport  and energy-loss processes has  been worked out as well,
still in   the  frame  of the   spherical-harmonics  solution  of  the
Boltzmann Transport Equation. The  relevant scattering mechanisms have
been modeled: both  the polar and non-polar electron-phonon scattering
mechanisms   have been  considered.    The  scattering rates  for each
contribution have  been analyzed in  comparison with Monte Carlo data.
The investigation   showed a good  agreement with  experiments for the
calculation  of mobility and  mean energy in  the low-field regime and
for different  temperatures. A more accurate  description of the bands
at higher energies has been carried out by tackling the calculation of
the full-band structure of SiO$_2$.  As the  amorphous SiO$_2$ shows a
number of electronic and optical properties in common with some silica
polymorphs,  a selected set of  crystals have been  analyzed.  {\it Ab
initio}  calculations of the  full-band structure have been worked out
by means    of   two different  techniques:  Hartree-Fock    (HF)  and
Density-Functional  Theory  (DFT).   Accurate   calculations  of  both
valence and conduction band structures, of the corresponding densities
of states (DOS), have been carried out.
%
\\
%
Then,  the analysis of the  interface between  the silicon and silicon
dioxide has been tackled with,  in the two-dimensional case, in  order
to fully simulate MOSFET devices.
%
\bigskip
%
% in case of several authors:
{\bf  Presented by Massimo Rudan}
%
\end{document}

